Application at a high temperature of 1150℃

Application Cases

Application Fields

Source: | Author: 1 | Published time: 2022-10-15 | 232 Views | Share:

The gain rotating and grain boundary migration under the condition of high stress and high temperature.

Related to recommend

Relationship between microstructure evolution and electrical properties of sulfur smiconductor

Application at 600℃

Relationship between microstructure evolution of sulfur semiconductor and electrical properties

Application at 700℃

BestronST (Beijing) Science and Technology Co., LTD.

Add:

Beijing University of Technology Science park, Building 29, Yard 1, Jinghai Fifth Road, Tongzhou District, Beijing

Mobile：

+86-010-67866979

E-mail：

info@bestronst.com