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Application Case​​

Relationship between microstructure evolution and electrical properties of sulfur smiconductor

Application at 600℃

Relationship between microstructure evolution of sulfur semiconductor and electrical properties

Application at 700℃​




Patent Information

  • Patent type:Chinese patent Patent name:The utility model relates to an in-situ experimental platform loaded by tem force and thermal coupling field
    Patent type:Chinese patent
    Patent name:    The utility model relates to an in-situ experimental platform loaded by tem force and thermal coupling field


  • Patent type:Chinese patent Patent name:In situ force and electrical properties of biaxial tilting were used to test the sample rod by tem in 2013
    Patent type:Chinese patent
    Patent name:    In situ force and electrical properties of biaxial tilting were used to test the sample rod by tem in 2013
  • Patent type:Japanese patent Patent name:Transmission electron microscope (tem) test sample rod with biaxial tilting in situ force and electrical properties
    Patent type:Japanese patent
    Patent name:    Transmission electron microscope (tem) test sample rod with biaxial tilting in situ force and electrical properties
  • Patent type:American patent Patent name:Transmission electron microscope biaxial tilting in-situ mechanical sample rod -1 based on piezoelectric ceramic drive
    Patent type:American patent
    Patent name:    Transmission electron microscope biaxial tilting in-situ mechanical sample rod -1 based on piezoelectric ceramic drive
  • Patent type:Chinese patent Patent name:A transmission electron microscope USES a biaxial tilting sample table
    Patent type:Chinese patent
    Patent name:    A transmission electron microscope USES a biaxial tilting sample table
  • Patent type:Chinese patent Patent name:Transmission electron microscope biaxial tilting in situ mechanical sample rod driven by piezoelectric ceramics
    Patent type:Chinese patent
    Patent name:    Transmission electron microscope biaxial tilting in situ mechanical sample rod driven by piezoelectric ceramics
  • Patent type:Chinese patent Patent name:The invention relates to a transmission electron microscope double dip in situ nano indentation platform
    Patent type:Chinese patent
    Patent name:    The invention relates to a transmission electron microscope double dip in situ nano indentation platform
  • Patent type:American patent Patent name:Transmission electron microscope (tem) test sample rod with biaxial tilting in situ force and electrical properties
    Patent type:American patent
    Patent name:    Transmission electron microscope (tem) test sample rod with biaxial tilting in situ force and electrical properties
  • Patent type:Chinese patent Patent name:An in-situ TEM tensile table for studying mechanical properties of a material at a specific temperature
    Patent type:Chinese patent
    Patent name:An in-situ TEM tensile table for studying mechanical properties of a material at a specific temperature
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